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30V N-Channel Enhancement Mode MOSFET
V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,Vgs@4.5V,Ids@30A=10 m Ù
FEATURES
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current
TO-252(D-PAK) Top ...
