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AO3700 Dataheets PDF



Part Number AO3700
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel FET
Datasheet AO3700 DatasheetAO3700 Datasheet (PDF)

www.DataSheet4U.com AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3700 is Pb-free (meets ROHS & Sony 259 specifications). AO3700L is a Green Product ordering option. AO3700 and AO3700L are electrica.

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www.DataSheet4U.com AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3700 is Pb-free (meets ROHS & Sony 259 specifications). AO3700L is a Green Product ordering option. AO3700 and AO3700L are electrically identical. Features VDS (V) = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] SOT-23-5 Top View G S A 1 2 3 5 4 D K G D K S A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Continuous Drain Current A TA=70°C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25°C IF Continuous Forward Current A TA=70°C IFM Pulsed Forward Current B Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A MOSFET 30 ±12 3.3 2.6 10 Schottky Units V V A TA=25°C TA=70°C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.15 0.7 -55 to 150 Typ 80.3 117 43 109.4 136.5 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd. AO3700 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.3A TJ=125°C 1 10 1.4 51 64 60 100 11.7 0.81 Min 30 1 5 100 2 65 90 75 160 1 2.5 270 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC V mA pF 10 ns nC gFS VSD IS VGS=4.5V, ID=3.0A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 226 39 29 1.4 4.6 1.4 0.55 2.6 3.2 14.5 2.1 10.2 3.8 0.39 2.5 5.5 VGS=4.5V, VDS=15V, ID=3.3A VGS=10V, VDS=15V, RL=4.7Ω , RGEN=6Ω IF=3.3A, dI/dt=100A/µs IF=3.3A, dI/dt=100A/µs IF=0.5A VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs 13 0.5 0.1 20 34 5.2 0.8 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 Alpha & Omega Semiconductor, Ltd. AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V 12 3.5V 4V 6V 9 ID (A) 3V 6 ID(A) 10 8 VDS=5V 6 VGS=2.5V 3 4 125°C 2 51 60 100 25°C 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1 3.5 200 175 150 RDS(ON) (mΩ ) 125 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 125° 80 RDS(ON) (mΩ ) 70 25°C 60 50 40 0 2 4 6 8 10 VGS (Volts) Figure.


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