TIM4450-8SL

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 10V Power Gain at 1dB G1dB f= 4.4 to 5.0GHz Compression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level) UNIT dBm dB A dB % dBc A °C MIN. 38.5 8.5    -42   TYP. MAX.  39.5 9.5 2.2  36 -45 2.2   2.6 ±0.6   2.6 80 ELECTRICAL CHARACTERISTICS ( Ta= 25° C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS = 3V IDS = 3.0A VDS = 3V IDS = 30mA VDS = 3V VGS= 0V IGS= -100µA Channel to Case UNIT mS V A V °C/W Gm VGSoff IDSS VGSO Rth(c-c) MIN.  -1.0  -5  TYP. 1800 -2.5 5.2  2.5 MAX.  -4.0 7.0  3.8 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise und...