Document
www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM4450-16UL
TECHNICAL DATA FEATURES
nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two-Tone Test Po= 31.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB) X Rth(c-c)
SYMBOL P1dB
CONDITIONS
UNIT dBm
MIN. 41.5 9.0 -44
TYP. MAX. 42.5 10.0 4.4 36 -47 4.4 5.0 ±0.6 5.0 80
f = 4.4 to 5.0GHz
ηadd
IM3
dBc A °C
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
gm
VGSoff IDSS VGSO
CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200µA
UNIT mS V A V °C/W
MIN. -1.0 -5
TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8
Rth(c-c) Channel to Case
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006
TIM4450-16UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 °C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W °C °C RATING 15 -5 14 83.3 175 -65 to +175
PACKAGE OUTLINE (2-16G1B)
0.7±0.15 4 – C1.0
(1)
Unit in mm 2.5 MIN.
(1) Gate (2) Source (3) Drain
(2)
(2)
(3)
20.4±0.3 0.1 -0.05 24.5 MAX. 16.4 MAX.
+0.1
2.5 MIN.
2.6±0.3
17.4± 0.4
8.0±0.2
0.2 MAX.
1.4± 0.3
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
2
2.4± 0.3
5.5 MAX.
TIM4450-16UL
RF PERFORMANCE Output Power vs. Frequency 45 44 Po (dBm) 43 42 41 40 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 Frequency (GHz)
VDS= 10V IDS≅ 4.4A Pin= 32.5dBm
Output Power vs. Input Power
45 44 43 42 Po (dB m) 41 40 39 38 37 36 26 28 30 32 34 36 ƒÅadd f= 4.7GHz VDS= 10V IDS≅ 4.4A 90 80 Po 70 60 50 40 30 20 10 0 ƒÅadd (% )
P i n ( dB m )
3
TIM4450-16UL
Power Dissipation vs. Case Temperature
100
80
PT (W )
60
40
20
0 0 40 80 Tc (•Ž ) 120 160 200
IM3 vs. Output Power Characteristics - 20
VDS= 10V IDS≅ 4.4A f= 4.7GHz ∆f= 5MHz
- 30 IM3 (dBc)
- 40
- 50
- 60 27 29 31 33 35 37
Po(dBm), Single Carrier Level
4
.