MA27V12

www.DataSheet4U.com Variable Capacitance Diodes MA27V12 Silicon epitaxial planar type Unit: mm For VCO s Features Good linearity and large capacitance-ratio in CD − VR relation High frequency type by this low capacitance Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-spped mounting 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5° s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 125 −55 to +125 Unit V °C °C 0.15 min. 5° 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: E s Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 3.60 1.97 1.75 Conditions Min Typ Max 10 3.90 2.14 1.90 0.35  Ω Unit nA pF Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 max. 0.52±0.03 0.15 min. Publication date: April 2002 SKD00060AED 1 MA27V12 I F  VF 180 160 25°C 10 CD  VR f = 1 MHz Ta = 25°C 1.031 f = 1 MHz 1.026 1.021 CD  Ta Diode capacitance CD (pF) Forward current IF (mA) 140 120 Ta = 60°C 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 −40°C VR = 1 V CD (Ta) CD (Ta = 25°C) 1.016 1.011 4V 1.006 1.001 0.996 0.991 1 0.1 0 5 10...