Silicon epitaxial planar type
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Variable Capacitance Diodes
MA27V05
Silicon epitaxial planar type
Unit: mm
For VCO s Features
• G...
Description
www.DataSheet4U.com
Variable Capacitance Diodes
MA27V05
Silicon epitaxial planar type
Unit: mm
For VCO s Features
Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27+0.05 –0.02 2
0.10+0.05 –0.02
1.00±0.05
1.40±0.05
1 0.60±0.05 5°
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 10 125 −55 to +125 Unit V °C °C
0.15 min.
5°
0 to 0.01
1: Anode 2: Cathode SSSMini2-F1 Package
Marking Symbol: 5
s Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.5 3.6 4.7 0.65 Conditions Min Typ Max 10 20.5 4.1 Ω Unit nA pF
Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 max.
0.52±0.03
0.15 min.
Publication date: April 2002
SKD00058AED
1
MA27V05
I F VF
180 160 25°C
CD VR
100 f = 1 MHz Ta = 25°C
1.040 1.036 1.032 1.028 1.024 1.020 1.016 1.012 1.008 1.004 1.000 0.996 0.992 0.988 0.984 f = 1 MHz
CD Ta
CD (Ta) CD (Ta = 25°C)
120 100 Ta = 60°C 80 60 40 20 0 −40°C
Diode capacitance CD (pF)
Forward current IF (mA)
140
VR = 1 V 4V
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1...
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