MA27V04

www.DataSheet4U.com Variable Capacitance Diodes MA27V04 Silicon epitaxial planar type Unit: mm For VCO s Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5° s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.15 min. 5° 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: 4 s Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR CD(1V) CD(3V) rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.0 5.8 Conditions Min Typ Max 10 11.1 6.4 0.35 Ω Unit nA pF Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 max. 0.52±0.03 0.15 min. Publication date: April 2002 SKD00057AED 1 MA27V04 I F  VF 120 25°C 100 CD  VR f = 1 MHz Ta = 25°C 1.036 1.032 1.028 f = 1 MHz CD  Ta 100 Diode capacitance CD (pF) Forward current IF (mA) 1.024 1.020 VR = 1 V CD (Ta) CD (Ta = 25°C) 80 1.016 1.012 1.008 1.004 1.000 0.996 0.992 0.988 3V 60 Ta = 60°C −40°C 10 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 2 4 6 8 10 12 0.984 0 20 40 60 80 100 Forward voltage VF (V...