Document
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
MPLEM ENTATION
March 2015
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
Features
Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
Low gate resistance Avalanche rated and 100% tested
AD FREE I
LE
RoHS Compliant
D
G
D
G DS
I-PAK
S
G
(TO-251AA)
Short Lead I-PAK
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID
-Continuous (Die Limited)
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
Thermal Characteristics
(Note 1) (Note 2)
Ratings 25 ±20 35 98 305 91 88
-55 to 175
Units V V
A
mJ W °C
RθJC
Thermal Resistance, Junction to Case TO_252, TO_251
1.7
RθJA
Thermal Resistance, Junction to Ambient TO_252, TO_251
100
RθJA
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
52
Package Marking and Ordering Information
°C/W °C/W °C/W
Device Marking FDD8796 FDU8796 FDU8796
Device FDD8796 FDU8796 FDU8796_F071
Package TO-252AA TO-251AA TO-251AA
Reel Size 13’’
N/A (Tube) N/A (Tube)
Tape Width 16mm N/A N/A
Quantity 2500 units
75 units 75 units
©2006 Fairchild Semiconductor Corporation
1
FDD8796/FDU8796 Rev. 1.1
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
∆BVDSS ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250µA, VGS = 0V
25
ID = 250µA, referenced to 25°C
VDS = 20V VGS = 0V
VGS = ±20V
TJ = 150°C
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
∆VGS(th) ∆TJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 35A
rDS(on)
Drain to Source On Resistance
VGS = 4.5V, ID = 35A
VDS = 10V, ID = 35A TJ = 175°C
Dynamic Characteristics
Ciss Coss Crss RG
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Switching Characteristics
VDS = 13V, VGS = 0V, f = 1MHz
f = 1MHz
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge
Drain-Source Diode Characteristics
VDD =13V, ID = 35A VGS = 10V, RGS = 20Ω
VGS = 0 to10V
VGS = 0 to 5V
VDD =13V, ID = 35A,
Ig = 1.0mA
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
VGS = 0V, IS = 35A VGS = 0V, IS = 15A IF = 35A, di/dt = 100A/µs IF = 35A, di/dt = 100A/µs
Typ
7
1.8 -6.7 4.5 6.0 6.9
1960 455 315 1.1
10 24 99 57 37 19 6 6
0.9 0.8 30 23
Max Units
V mV/°C 1
µA 250 ±100 nA
2.5
V
mV/°C
5.7
8.0
mΩ
9.5
2610 pF
605
pF
475
pF
Ω
20
ns
39
ns
158
ns
91
ns
52
nC
27
nC
nC
nC
1.25
V
1.0
V
45
ns
35
nC
FDD8796/FDU8796 Rev. 1.1
2
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
70
60
PULSE DURATION = 80µs
VGS = 10V DUTY CYCLE = 0.5%MAX
50
VGS = 4.5V
40 VGS = 3.5V
30
20
VGS = 3V
10
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4.0 VGS = 3V
3.5
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
3.0
2.5 VGS = 3.5V
2.0
1.5
VGS = 4.5V
1.0
0.5 0
VGS = 10V
10 20 30 40 50 60 70 ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8
ID = 35A
1.6
VGS = 10V
1.4
1.2
1.0
0.8
0.6 -80
-40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
rDS(on), ON-RESISTANCE (mΩ)
14
ID =35A 12
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
10
8
TJ = 175oC
6
4
TJ = 25oC
2
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source Voltage
ID, DRAIN CURRENT (A)
70
PULSE DURATION = 80µs 60 DUTY CYCLE = 0.5%MAX
50
TJ = 175oC
40
30 TJ = 25oC
20
10
TJ = -55oC
0
0
1
2
3
4
VGS, GATE TO.