DatasheetsPDF.com

FDD8796 Dataheets PDF



Part Number FDD8796
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD8796 DatasheetFDD8796 Datasheet (PDF)

FDD8796/FDU8796 N-Channel PowerTrench® MOSFET MPLEM ENTATION March 2015 FDD8796/FDU8796 N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus .

  FDD8796   FDD8796


Document
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET MPLEM ENTATION March 2015 FDD8796/FDU8796 N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture Features „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V „ Low gate resistance „ Avalanche rated and 100% tested AD FREE I LE „ RoHS Compliant D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) Ratings 25 ±20 35 98 305 91 88 -55 to 175 Units V V A mJ W °C RθJC Thermal Resistance, Junction to Case TO_252, TO_251 1.7 RθJA Thermal Resistance, Junction to Ambient TO_252, TO_251 100 RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 Package Marking and Ordering Information °C/W °C/W °C/W Device Marking FDD8796 FDU8796 FDU8796 Device FDD8796 FDU8796 FDU8796_F071 Package TO-252AA TO-251AA TO-251AA Reel Size 13’’ N/A (Tube) N/A (Tube) Tape Width 16mm N/A N/A Quantity 2500 units 75 units 75 units ©2006 Fairchild Semiconductor Corporation 1 FDD8796/FDU8796 Rev. 1.1 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250µA, VGS = 0V 25 ID = 250µA, referenced to 25°C VDS = 20V VGS = 0V VGS = ±20V TJ = 150°C VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 35A rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 35A VDS = 10V, ID = 35A TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching Characteristics VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge Drain-Source Diode Characteristics VDD =13V, ID = 35A VGS = 10V, RGS = 20Ω VGS = 0 to10V VGS = 0 to 5V VDD =13V, ID = 35A, Ig = 1.0mA VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V. VGS = 0V, IS = 35A VGS = 0V, IS = 15A IF = 35A, di/dt = 100A/µs IF = 35A, di/dt = 100A/µs Typ 7 1.8 -6.7 4.5 6.0 6.9 1960 455 315 1.1 10 24 99 57 37 19 6 6 0.9 0.8 30 23 Max Units V mV/°C 1 µA 250 ±100 nA 2.5 V mV/°C 5.7 8.0 mΩ 9.5 2610 pF 605 pF 475 pF Ω 20 ns 39 ns 158 ns 91 ns 52 nC 27 nC nC nC 1.25 V 1.0 V 45 ns 35 nC FDD8796/FDU8796 Rev. 1.1 2 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) 70 60 PULSE DURATION = 80µs VGS = 10V DUTY CYCLE = 0.5%MAX 50 VGS = 4.5V 40 VGS = 3.5V 30 20 VGS = 3V 10 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = 3V 3.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.0 2.5 VGS = 3.5V 2.0 1.5 VGS = 4.5V 1.0 0.5 0 VGS = 10V 10 20 30 40 50 60 70 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 ID = 35A 1.6 VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature rDS(on), ON-RESISTANCE (mΩ) 14 ID =35A 12 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 10 8 TJ = 175oC 6 4 TJ = 25oC 2 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage ID, DRAIN CURRENT (A) 70 PULSE DURATION = 80µs 60 DUTY CYCLE = 0.5%MAX 50 TJ = 175oC 40 30 TJ = 25oC 20 10 TJ = -55oC 0 0 1 2 3 4 VGS, GATE TO.


FDU8782 FDD8796 FDU8796


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)