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STTH30R06CW

ST Microelectronics

Turbo 2 ultrafast high voltage rectifier

STTH30R06C Turbo 2 ultrafast high voltage rectifier Datasheet - production data A1 K A2 TO-247 A2 K A1 Features  ...


ST Microelectronics

STTH30R06CW

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STTH30R06C Turbo 2 ultrafast high voltage rectifier Datasheet - production data A1 K A2 TO-247 A2 K A1 Features  Ultrafast switching  Low reverse current  Low thermal resistance  Reduced switching and conduction losses Description This device using ST Turbo 2 600 V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1: Device summary Symbol Value IF(AV) VRRM IRM (typ.) Tj (max.) VF (typ.) trr (max.) 2 x 15 A 600 V 8A 175 °C 1.8 V 50 ns February 2018 DocID7975 Rev 3 This is information on a product in full production. 1/9 www.st.com Characteristics STTH30R06C 1 Characteristics Symbol Table 2: Absolute ratings (limiting values, per diode) Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage 600 V Forward rms current 30 A Tc = 115 °C, δ = 0.5, per diode 15 Average forward current A Tc = 100 °C, δ = 0.5, per device 30 Surge non repetitive forward current tp = 10 ms sinusoidal 120 A Storage temperature range -65 to +175 °C Maximum operating junction temperature 175 °C Symbol Rth(j-c) Rth(c) Table 3: Thermal parameters Parameter Junction to case Per diode Total Coupling Max. value 1.5 1.0 0.5 Unit °C/W Symbol IR(1) VF(2) Table 4: Static electrical characteristics (per diode) Parameter Test condi...




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