STTH30R03CW

® STTH30R03CW/CG HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM IRM (typ.) Tj (max) VF (max) trr (max) 2 x 15 A 300 V 4.5A 175 °C 1.4 V 35 ns FEATURES AND BENEFITS s Designed for high frequency applications. s Hyperfast recovery competes with GaAs devices. s Allows size decrease of snubbers and heatsinks. DESCRIPTION The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. A2 K A1 TO-247 STTH30R03CW K A2 A1 D2PAK STTH30R03CG ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current Tc = 120°C δ = 0.5 Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature Value Unit 300 V 30 A 15 A 30 120 A - 65 + 175 °C + 175 °C July 2002 - Ed: 1C 1/6 STTH30R03CW/CG THERMAL AND POWER DATA Symbol Rth (j-c) Junction to case Parameter Rth (c) Per diode Total Coupling Value 2.0 1.2 0.4 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% Min. Typ. Max. Unit 20 µA 3...