Document
HA22033
GaAs MMIC Low Noise Amplifier for Micro Wave Application
ADE-207-266 (Z) 1st. Edition October 1998 Features
• • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built–in matching circuits (50Ω) Small surface mount package (MPAK–5)
Outline
MPAK–5
This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
HA22033
Absolute Maximum Ratings (Ta = 25°C)
Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 6 100 150 –55 to +125 –20 to +70 +15 Unit V mA mW °C °C °C dBm
Electrical Characteristics (Ta = 25°C, Vdd = 2.7V)
Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min — 12 — Typ 1.7 14 1.4 Max 2.5 — 2 Unit mA dB dB Test Conditions No signal f = 1.5 GHz f = 1.5 GHz Pin
Typical Performance (Ta = 25°C, Vdd = 2.7V)
Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.5 2.2 50 Unit — — dB Test Conditions f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz, Pin = –30 dBm Pin 4 1
HA22033
Block Diagram in
1.5pF 4 5.6nH 2 3
Cs 100pF GND
Vdd 5 1
out
100pF
HA22033
Pin Arrangement
GEA
Monthly code (variable) Mark type
1
5
GEA
Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power supply
2
3
4
Top View
Pin No. 1 2 3 4 5
Bypath capacitor (>100 pF)
HA22033
Pattern Layout
scale 4/1 : φ0.5mm : φ0.3mm
Front Side view of PCB Pattern
scale 4/1 100pF 5.6nH 1.5pF Vdd GEA RF in cs : Capacitor : Inductor
RF out 100pF
ER=4.8 H=1mm
Front Side view of Part Layout(1.5GHz)
HA22033
Main Characteristics
Power Gain vs. Frequency 20 Vdd = 2.7 V Ta = +25°C 15 Noise Figure NF (dB) Power Gain PG (dB) 3 4
Noise Figure vs. Frequency
10
2
5
1 Vdd = 2.7 V Ta = +25°C
0 1.0
1.5
2.0
2.5
0 1.0
1.5
2.0
2.5
Frequency f (GHz)
Frequency f (GHz)
VSWR vs. Frequency 6 Output Power Pout (dBm) Vdd = 2.7 V Ta = +25°C 5 20
Output Power, 3rd Order Inter– modlation Distortion vs. Input Power Vdd = 2.7 V f = 1.5 GHz 0 ud = 1.5006 GHz Ta = +25°C Pout
VSWR
4 output
–20
3
–40 im3 –60 –80 –60 –50 –40 –30 –20 –10 Input Power Pin (dBm)
2 1 1.0
input
1.5
2.0
2.5
0
10
Frequency f (GHz)
HA22033
Power Gain vs. Supply Voltage 20 f = 1.5 GHz Ta = +25°C Noise Figure NF (dB) Power Gain PG (dB) 15 3 4 f = 1.5 GHz Ta = +25°C Noise Figure vs. Supply Voltage
10
2
5
1
0 2 2.5 3 3.5 4 4.5 5 Supply Voltage Vdd (V)
0 2 2.5 3 3.5 4 4.5 5 Supply Voltage Vdd (V)
VSWR vs. Supply Voltage 5 f = 1.5 GHz Ta = +25°C P1dB, IP3o (dBm) 4 VSWR
Pout @ 1dB Gain Compression, 3rd Order Inter–cept P.
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