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HA22033 Dataheets PDF



Part Number HA22033
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description GaAs MMIC Low Noise Amplifier for Micro Wave Application
Datasheet HA22033 DatasheetHA22033 Datasheet (PDF)

HA22033 GaAs MMIC Low Noise Amplifier for Micro Wave Application ADE-207-266 (Z) 1st. Edition October 1998 Features • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built–in matching circuits (50Ω) Small surface mount package (MPAK–5) Outline MPAK–5 This document may, wholly or partially, be subject to change without notice. This De.

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HA22033 GaAs MMIC Low Noise Amplifier for Micro Wave Application ADE-207-266 (Z) 1st. Edition October 1998 Features • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built–in matching circuits (50Ω) Small surface mount package (MPAK–5) Outline MPAK–5 This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not HA22033 Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 6 100 150 –55 to +125 –20 to +70 +15 Unit V mA mW °C °C °C dBm Electrical Characteristics (Ta = 25°C, Vdd = 2.7V) Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min — 12 — Typ 1.7 14 1.4 Max 2.5 — 2 Unit mA dB dB Test Conditions No signal f = 1.5 GHz f = 1.5 GHz Pin Typical Performance (Ta = 25°C, Vdd = 2.7V) Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.5 2.2 50 Unit — — dB Test Conditions f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz, Pin = –30 dBm Pin 4 1 HA22033 Block Diagram in 1.5pF 4 5.6nH 2 3 Cs 100pF GND Vdd 5 1 out 100pF HA22033 Pin Arrangement GEA Monthly code (variable) Mark type 1 5 GEA Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power supply 2 3 4 Top View Pin No. 1 2 3 4 5 Bypath capacitor (>100 pF) HA22033 Pattern Layout scale 4/1 : φ0.5mm : φ0.3mm Front Side view of PCB Pattern scale 4/1 100pF 5.6nH 1.5pF Vdd GEA RF in cs : Capacitor : Inductor RF out 100pF ER=4.8 H=1mm Front Side view of Part Layout(1.5GHz) HA22033 Main Characteristics Power Gain vs. Frequency 20 Vdd = 2.7 V Ta = +25°C 15 Noise Figure NF (dB) Power Gain PG (dB) 3 4 Noise Figure vs. Frequency 10 2 5 1 Vdd = 2.7 V Ta = +25°C 0 1.0 1.5 2.0 2.5 0 1.0 1.5 2.0 2.5 Frequency f (GHz) Frequency f (GHz) VSWR vs. Frequency 6 Output Power Pout (dBm) Vdd = 2.7 V Ta = +25°C 5 20 Output Power, 3rd Order Inter– modlation Distortion vs. Input Power Vdd = 2.7 V f = 1.5 GHz 0 ud = 1.5006 GHz Ta = +25°C Pout VSWR 4 output –20 3 –40 im3 –60 –80 –60 –50 –40 –30 –20 –10 Input Power Pin (dBm) 2 1 1.0 input 1.5 2.0 2.5 0 10 Frequency f (GHz) HA22033 Power Gain vs. Supply Voltage 20 f = 1.5 GHz Ta = +25°C Noise Figure NF (dB) Power Gain PG (dB) 15 3 4 f = 1.5 GHz Ta = +25°C Noise Figure vs. Supply Voltage 10 2 5 1 0 2 2.5 3 3.5 4 4.5 5 Supply Voltage Vdd (V) 0 2 2.5 3 3.5 4 4.5 5 Supply Voltage Vdd (V) VSWR vs. Supply Voltage 5 f = 1.5 GHz Ta = +25°C P1dB, IP3o (dBm) 4 VSWR Pout @ 1dB Gain Compression, 3rd Order Inter–cept P.



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