MCH3444

www.DataSheet4U.com Ordering number : ENN7608 MCH3444 N-Channel Silicon MOSFET MCH3444 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2167A [MCH3444] 0.25 0.3 0.15 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions SANYO : MCPH3 Ratings 30 ±12 2.5 10 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.3A ID=1.3A, VGS=4V ID=0.7A, VGS=2.5V Ratings min 30 1 ±10 0.4 1.9 3.2 82 105 108 150 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : ZV Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-supp...