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BLV108
N MOSFET : :
N VDMOS，，
：
VDSS VGSS ID PD Tj, TSDG
(T=25℃ (T=25℃)
200 + 20 300 1 -55 to +150
V V mA W
o
Power Dissipation for Dual Operation
C
Rth j-a
Thermal Resistance, Junction to Ambient TA=25oC
o
125
K/W
200
V
BVDSS I DSS
I GSS
VGS = 0V , I D = 10uA VDS = 160V , VGS = 0V
VGS = ±2...
