EC3A01H

www.DataSheet4U.com Ordering number : ENN7301 EC3A01H N-Channel Silicon Junction FET EC3A01H Electret Condenser Microphone Applications Features Package Dimensions unit : mm 2209 [EC3A01H] 1.200 0.500 3 0.60 1 2 0.050 0.320 0.460 1.100 Bottom View 0.500 Top View 3 2 1.200 Marking 0.050 0.320 Ultraminiature (1206 size) and thin (0.5mm) leadless package. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. 0.3 4 0.500 0.050 0.320 1 : Source 2 : Drain 1 3 : Gate SANYO : ECSP1206 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings -20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=--100µA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz Ratings min --20 --0.2 140* 0.5 1.2 3.5 0.65 --0.6 --1.2 350* typ max Unit V V µA mS pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle application...