FDY101PZ

www.DataSheet4U.com FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET January 2006 FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12 Ω @ VGS = – 2.5 V ESD protection diode (note 3) RoHS Compliant Applications Li-Ion Battery Pack 1S G 1 G 3 S 2 D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) (Note 1a) Ratings – 20 ±8 – 150 – 1000 625 446 –55 to +150 Units V V mA mW °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking B Device FDY101PZ Reel Size 7’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY101PZ Rev A www.fairchildsemi.com FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage...