High Linearity InGaP HBT Amplifier
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½ Watt, High Linearity InGaP HBT Amplifier
AH116
The Communications Edge TM Product Information
...
Description
www.DataSheet4U.com
½ Watt, High Linearity InGaP HBT Amplifier
AH116
The Communications Edge TM Product Information
Product Features
x 800 – 1000 MHz x +28 dBm P1dB x +43 dBm Output IP3 x 17.5 dB Gain @ 900 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5 2 3 4
Applications
x Final stage amplifiers for Repeaters x Mobile Infrastructure
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Frequency Range Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR
Typical Performance (1)
Min
15
Units
MHz d...
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