12A02CH

www.DataSheet4U.com Ordering number : ENN7482 12A02CH PNP Epitaxial Planar Silicon Transistors 12A02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2150A [12A02CH] Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit. Features Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]. Small ON-resistance (Ron). 0.4 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings --15 --12 --5 --1 --2 700 150 --55 to +150 Unit V V V A A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB= --12V, IE=0 VEB= --4V, IC=0 VCE= --2V, IC= --10mA VCE= --2V, IC= --50mA 300 450 Conditions Ratings min typ max --100 --100 700 MHz Unit nA nA Marking : AD 0.7 0.9 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi...