STT5NF20V

www.DataSheet4U.com N-CHANNEL 20V - 0.030 Ω - 5A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STT5NF20V s s s STT5NF20V VDSS 20 V RDS(on) < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) ID 5A s TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 20 20 ± 12 5 3 20 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot () Pulse width limited by safe operating area. May 2002 . 1/8 STT5NF20V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 -55 to 150 -55 to 150 °C/W °C °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unle...