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IDT16S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor materi...
www.DataSheet4U.com
IDT16S60C
2nd Generation thinQ!TM SiC
Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 38 16 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type IDT16S60C Package PG-TO220-2-2 Marking D16S60C Pin 1 C Pin 2 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 16 23 118 64 528 69 600 VR=0…480V T C=25 °C 50 136 -55 ... 175 M3 and M3.5 screws 60 A2s V V/ns W °C Ncm Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg
Rev. 2.0
page 1
2006-03-14
IDT16S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistanc...