General-Purpose Switching Device Applications
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Ordering number : ENN8101
SCH1306
P-Channel Silicon MOSFET
SCH1306
Features
• • •
General-Purpo...
Description
www.DataSheet4U.com
Ordering number : ENN8101
SCH1306
P-Channel Silicon MOSFET
SCH1306
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --20 ±10 --1 --4 0.8 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=--500mA, VGS=--4.0V ID=--300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --20 --1 ±10 --0.4 0.84 1.2 380 540 115 23 15 8 6 15 7 500 760 --1.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns...
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