MRFG35010AR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —10 dB Drain Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth 10 Watts P1dB @ 3550 MHz, CW Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRFG35010AR1 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D - 02, STYLE 1 NI - 360HF Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 15 -5 33 - 65 to +175 175 - 40 to +90 Unit Vdc Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Case Temperature 79°C, 1 W CW Class AB Class A Symbol RθJC Value (1, 2) 4.0 4.1 Unit °C/W 1. For reliable operation, the operating c...