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MRFG35003MT1

Part Number	MRFG35003MT1
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Dec 4, 2006
Detailed Description	www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG3...
Datasheet	MRFG35003MT1 PDF File

Overview

www.
DataSheet4U.
com MOTOROLA Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 300 mWatt Power Gain — 11.
5 dB Efficiency — 25% MRFG35003MT1 3.
5 GHz, 3 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc.
.
.
• 3 Watts P1dB @ 3...

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