2M X 16 Bit Low Voltage Super RAM
A64S16161
Preliminary
Features
● Memory Cell : Dynamic memory( DRAM ) ● Refresh: Completely free ● Power Down: Control b...
Description
A64S16161
Preliminary
Features
● Memory Cell : Dynamic memory( DRAM ) ● Refresh: Completely free ● Power Down: Control by CS2( No Data Retention ) ● Byte Control : Capable of single byte operation ● Power Consumption: 100μA( Standby Current ) ● Operating Temperature Range: -40’C~+85’C ● Composition:2,097,152 Word X 16 Bit ● Supply Power Voltage:2.70V to 3.30V ● Access Time: 70nS ● Access Time ( Page Access Read ): 30nS ● I/O Terminal :Input / Output Common 3-state output
2M X 16 Bit Low Voltage Super RAM
1 A B C D E F G H
LB#
2
OE#
3
A0
4
A1
5
A2
6
CE2
DQ8
UB#
A3
A4
CE1#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
A17
A7
DQ3
VCC
Pin Description
Pin Name CS1# CS2 WE# OE# A0 to A20 IO0-7 IO8-15 LB# UB# VCC VSS Description Chip select 1 ( Low Active ) Chip select 2 ( High Active ) Write enable ( Low Active ) Output enable ( Low Active ) Address Input ( A0 to A2 : Page Address) Lower Byte Input / Output Upper Byte Input / Output Lower Byte Control ( Low Active ) Upper Byte Control ( Low Active ) Power Supply Ground ( 0V)
VCC
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
Description
A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you can operate as same as the Asynchronous SRAM. A64S16161 is a 2,097,...
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