A64S16161

A64S16161 Preliminary Features ● Memory Cell : Dynamic memory( DRAM ) ● Refresh: Completely free ● Power Down: Control by CS2( No Data Retention ) ● Byte Control : Capable of single byte operation ● Power Consumption: 100μA( Standby Current ) ● Operating Temperature Range: -40’C~+85’C ● Composition:2,097,152 Word X 16 Bit ● Supply Power Voltage:2.70V to 3.30V ● Access Time: 70nS ● Access Time ( Page Access Read ): 30nS ● I/O Terminal :Input / Output Common 3-state output 2M X 16 Bit Low Voltage Super RAM 1 A B C D E F G H LB# 2 OE# 3 A0 4 A1 5 A2 6 CE2 DQ8 UB# A3 A4 CE1# DQ0 DQ9 DQ10 A5 A6 DQ1 DQ2 VSS DQ11 A17 A7 DQ3 VCC Pin Description Pin Name CS1# CS2 WE# OE# A0 to A20 IO0-7 IO8-15 LB# UB# VCC VSS Description Chip select 1 ( Low Active ) Chip select 2 ( High Active ) Write enable ( Low Active ) Output enable ( Low Active ) Address Input ( A0 to A2 : Page Address) Lower Byte Input / Output Upper Byte Input / Output Lower Byte Control ( Low Active ) Upper Byte Control ( Low Active ) Power Supply Ground ( 0V) VCC DQ12 NC A16 DQ4 VSS DQ14 DQ13 A14 A15 DQ5 DQ6 DQ15 A19 A12 A13 WE# DQ7 A18 A8 A9 A10 A11 A20 Description A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you can operate as same as the Asynchronous SRAM. A64S16161 is a 2,097,...