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Ordering number : ENN7362
30A02SS
PNP Epitaxial Planar Silicon Transistor
30A02SS
Low-Frequency G...
www.DataSheet4U.com
Ordering number : ENN7362
30A02SS
PNP Epitaxial Planar Silicon
Transistor
30A02SS
Low-Frequency General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm 2159A
[30A02SS]
Top View 1.4
0.3
Low-frequency Amplifier, high-speed switching, small motor drive.
Features
Side View 0.1
Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron).
0.25
3
0.8 0.3 1.4
1 0.45
0.2
2
Bottom View
0.07
Side View
0.6
3
1 : Base 2 : Emitter 3 : Collector SANYO : SSFP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.6mm) Conditions
Ratings --30 --30 --5 --600 --1.2 200 150 --55 to +150
0.07
2
1
Unit V V V mA A mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--200mA, IB=--...