30A01SP

www.DataSheet4U.com Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2033A [30A01SP] 4.0 3.0 2.2 Low-frequency power amplifier, muting circuit. Features 0.6 0.4 15.0 1.8 Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Small ON-resistance (Ron). 0.4 0.5 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --30 --30 --5 --300 --600 400 150 --55 to +150 Unit V V V mA mA mW °C °C 3.0 3.8nom Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA Ratings min typ max --0.1 --0.1 200 500 Unit µA µA Marking : XQ 0.7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably...