EDI2CG472256V

www.DataSheet4U.com White Electronic Designs 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x256Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#) Clock Controlled Byte Write Mode Enable (BWE#) Clock Controlled Byte Write Enables (BW1# - BW8#) Clock Controlled Registered Address Clock Controlled Registered Global Write (GW#) Aysnchronous Output Enable (G#) Internally Self-timed Write Individual Bank Sleep Mode enables (ZZ1, ZZ2, ZZ3, ZZ4) Gold Lead Finish 3.3V +10%, - 5% Operation Access Speed(s): TKHQV=9, 10, 12, 15ns Common Data I/O High Capacitance (30pf) drive, at rated Access Speed Single Total Array Clock Multiple Vcc and Gnd EDI2CG472256V ADVANCED* DESCRIPTION The EDI2CG472256VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x256Kx72. The Module contains sixteen (16) Synchronous Burst Ram Devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The module architecture is defined as a Sync/Sync Burst, FlowThrough, with support for either linear or sequential burst. This module provides High Performance, 2-1-1-1 accesses when used in Burst Mode, and used as a Synchronous Only Mode, provides a high performance cost advantage over BiCMOS aysnchronous device architectures. Synchronou...