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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-16SL-341
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERF...
