DatasheetsPDF.com

SD12CT1 Dataheets PDF



Part Number SD12CT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Transient Voltage Suppressor Protection
Datasheet SD12CT1 DatasheetSD12CT1 Datasheet (PDF)

www.DataSheet4U.com SD12CT1 Transient Voltage Suppressor Bi−directional ESD Protection with Ultra Low Clamping Voltage http://onsemi.com The SD12C is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make this part ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, pow.

  SD12CT1   SD12CT1


Document
www.DataSheet4U.com SD12CT1 Transient Voltage Suppressor Bi−directional ESD Protection with Ultra Low Clamping Voltage http://onsemi.com The SD12C is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make this part ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. Specification Features: • • • • • • • • Peak Power − 350 W (8 20 ms) Low Leakage Low Clamping Voltage Small Package for use in Portable Electronics Meets IEC61000−4−2 Level 4 Meets IEC6100−4−4 Level 4 Meets 16 kV Human Body Model ESD Requirements Pb−Free Package is Available 2 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic ZK M Epoxy Meets UL 94, V−0 MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. ZK = Specific Device Code M = Date Code ORDERING INFORMATION Device SD12CT1 SD12CT1G Package SOD−323 SOD−323 Pb−Free Shipping† 3000 Tape & Reel 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 February, 2005 − Rev. 0 Publication Order Number: SD12CT1/D SD12CT1 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms @ TL ≤ 25°C IEC 61000−4−2 (ESD) IEC 61000−4−4 (EFT) Storage Temperature Range Operating Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Tstg TJ TL Air Contact Symbol Ppk Value 350 ±30 ±30 40 −55 to +150 −55 to +125 260 Unit W kV A °C °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT QVBR Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Variation of VBR IPP IT VC VBR VRWM IR IR V RWM VBR VC IT V IPP I Bi−Directional TVS ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Clamping Voltage Additional Clamping Voltage Maximum Peak Pulse Current Capacitance Conditions (Note 1) IT = 1 mA, (Note 2) VRWM = 12 V IPP = 5 A, (8 x 20 msec Waveform) IPP = 15 A, (8 x 20 msec Waveform) 8 x 20 msec Waveform VR = 0 V, f = 1 MHz VR = 12 V, f = 1 MHz Symbol VRWM VBR IR VC IPP Cj 64 36 13.3 1.0 19 24 15 Min Typ Max 12 Unit V V mA V A pF 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. http://onsemi.com 2 SD12CT1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 HE D b 1 2 E A3 A L NOTE 5 C NOTE 3 A1 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 SD12CT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci.


MAX9123 SD12CT1 SD12C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)