DatasheetsPDF.com

FDMC2610

Fairchild Semiconductor
Part Number FDMC2610
Manufacturer Fairchild Semiconductor
Description N-Channel UltraFET Trench MOSFET
Published Nov 22, 2006
Detailed Description com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOS...
Datasheet PDF File FDMC2610 PDF File

FDMC2610
FDMC2610

Overview
com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.
5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
„ Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.
2A „ Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.
5A „ Low Profile - 1mm max in a MicroFET 3.
3 x 3.
3 mm „ RoHS Compliant tm Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)