RD12MVS1

< Silicon RF Power MOS FET (Discrete) > RD12MVS1 RoHS Compliant, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS VDSS Drain to Source Voltage VGS=0V VGSS Gate to Source Voltage VDS=0V ID Drain Current Pin Input Power Zg=Zl=50 Pch Channel Dissipation Tc=25°C Tj Junction Temperature Tstg Storage Temperature Rthj-c Thermal Resistance Junction to Case Note: Above parameters are guaranteed independently. RATINGS 50 +/- 20 4 2 50 150 -40...