N-Channel MOSFET
FDD8451 N-Channel PowerTrench® MOSFET
MPLEMENTATION
March 2015
FDD8451 N-Channel PowerTrench® MOSFET
40V, 28A, 24m:
...
Description
FDD8451 N-Channel PowerTrench® MOSFET
MPLEMENTATION
March 2015
FDD8451 N-Channel PowerTrench® MOSFET
40V, 28A, 24m:
Features
General Description
Max rDS(on) 24m: at VGS = 10V, ID = 9A Max rDS(on) 30m: at VGS = 4.5V, ID = 7A Low gate charge
Fast Switching
High performance trench technology for extremely low
rDS(on) RoHS compliant
AD FREE I
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
Application
DC/DC converter
Backlight inverter
LE
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous@TC=25°C
ID
-Continuous @TA=25°C
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
Thermal Characteristics
(Note 1a) (Note 3)
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a) (Note 1b)
Device Marking FDD8451
Device FDD8451
Package D-PAK(TO-252)
Reel Size 13’’
S
Ratings 40 ±20 28 9 78 20 30
-55 to 150
Units V V
A
mJ W °C
4.1
°C/W
40
°C/W
96
°C/W
Tape Width 16mm
Quantity 2500 units
©2009 Fairchild Semiconductor Corporation
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