N-Channel MOSFET
FDD8447L 40V N-Channel PowerTrench® MOSFET
March 2015
FDD8447L 40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Fea...
Description
FDD8447L 40V N-Channel PowerTrench® MOSFET
March 2015
FDD8447L 40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Applications
Inverter Power Supplies
D
D G
S DT O- P-2A5K2
(T O -25 2)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
IS EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Max Pulse Diode Current
Drain-Source Avalanche Energy
Power Dissipation
TC= 25°C
TA= 25°C
TA= 25°C
Operating and Storage Junction Temperature Range
TC= 25°C TC= 25°C TA= 25°C
Thermal Characteristics
G
(Note 1a) (Note 3) (Note 1a) (Note 1b)
S
Ratings 40 ±20 50 57 15.2 100 100 153 44 3.1 1.3
-55 to +150
Units V V
A
A mJ
W
°C
RθJC RθJA RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.8
(Note 1a)
40
(Note 1b)
96
°C/W
Device Marking FDD8447L
Device FDD8447L
Package D-PAK(TO-252)
Reel Size 13’’
Tape Width 16mm
Quantity 2500 units...
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