2 Watt InGaP HBT Amplifier
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MMA709 2 Watt InGaP HBT Amplifier
3030 OUTLINE
SOIC8 OUTLINE
Description:
The MMA709-3030 is a P...
Description
www.DataSheet4U.com
MMA709 2 Watt InGaP HBT Amplifier
3030 OUTLINE
SOIC8 OUTLINE
Description:
The MMA709-3030 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized in Class A operation. The device is assembled in a low profile plastic package that is a 3mm square DFN style that has eight leads. The backside of the packages are DC/RF/Thermal ground. The device is also available in SOIC8 Package.
Features:
High Output Power: +34 dBm (Typ) High 3rd Order OIP3: +54 dBm (Typ) High Dynamic Range: 97 dB (Typ) 3mm square DFN plastic package
RF Specifications:
Parameter Gain Output Power 3 Order IP Input VSWR Noise Figure Spur Free Dynamic Range Thermal Resistance
NOTES:
rd
Symbol SSG P1dB OIP3 NF SFDR
JC
Condition 1, 2 1, 2 1, 2, 3 1, 2 1, 2
1960 MHz
MIN TYP MAX MIN
21 40 MHz
TYP MAX
Units dB dBm dBm
10 +33 +52
1 1 +34 +55 2:1 6.5 6.5
9 +33 +50
9.5 +34 +53
1 3.5
2:1 6.5 95 102 1 2 7.0 dB dB °C/W
95 2
102
1. All measurements from device evaluation boards. 2. VS = 7.00 V, ICC = 700 mA. 3. IP3: Power output per tone = +1 5dBm, separation = 1.22 MHz
Absolute Maximum Ratings:
Parameters Operating temperature Range Storage Temperature Range Breakdown Voltage, Collector to Emitter DC Collector Current Operating Junction Temperature Symbol TOP TSTOR BV VCEO ICC TJ
Contact the factory when using other than 7 volts.
Minimu...
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