FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-5L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current...
