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STB19N20 STP19N20
N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK MESH OVERLAY™ Power MOSFET
General features
Type STB19N20 STP19N20
■ ■ ■
VDSS 200V 200V
RDS(on) <0.16Ω <0.16Ω
ID 15A 15A
3
Extremely high dv/dt capability
3 1
Gate charge minimized Very low intrinsic capacitances
TO-220
1
2
D²PAK
Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STB19N20 STP19N20 Marking B19N20 P19N20 Package D²PAK TO-220 Packaging Tape & reel Tube
October 2006
Rev 1
1/14
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Contents
STB19N20 - STP19N20
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 5
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB19N20 - STP19N20
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 200 ± 20 15 10 60 90 0.72 15 -55 to 150 Unit V V A A A W W/°C V/ns °C
PTOT dv/dt(2) TJ Tstg
Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 1.38 62.5 300 Unit °C/W °C/W °C
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche curent, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 15 110 Unit A mJ
Rev 1
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Electrical characteristics
STB19N20 - STP19N20
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 7.5A 2 3 0.15 Min. 200 1 10
±100
Typ.
Max.
Unit V µA µA nA V Ω
4 0.16
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =8V, ID = 7.5A VDS =25V, f=1 MHz, VGS=0 VDD=160V, ID = 15A VGS =10V (see Figure 14) Min. Typ. 12 800 165 26 24 4.4 11.6 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
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STB19N20 - STP19N20
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD=100 V, ID= 7.5A, RG=4.7Ω, VGS=10V (see Figure 13) VDD = 100 V, ID = 7.5A, RG = 4.7Ω, VGS = 10V (see Figure 13) Min. Typ. 11.5 22 Max. Unit ns ns
Turn-off delay time Fall time
19 11
ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VGS=0 ISD=15A, VDD=50V di/dt = 100A/µs, (see Figure 18) ISD=15A, VDD=50V di/dt = 100A/µs, Tj=150°C (see Figure 18) 125 0.55 8.8 148 0.73 9.9 Test conditions Min Typ. Max 15 60 1.6 Unit A A V ns µC A ns µC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Rev 1
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Electrical characteristics
STB19N20 - STP19N20
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Static drain-.