DatasheetsPDF.com

STP19N20 Dataheets PDF



Part Number STP19N20
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFETS
Datasheet STP19N20 DatasheetSTP19N20 Datasheet (PDF)

www.DataSheet4U.com STB19N20 STP19N20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK MESH OVERLAY™ Power MOSFET General features Type STB19N20 STP19N20 ■ ■ ■ VDSS 200V 200V RDS(on) <0.16Ω <0.16Ω ID 15A 15A 3 Extremely high dv/dt capability 3 1 Gate charge minimized Very low intrinsic capacitances TO-220 1 2 D²PAK Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compa.

  STP19N20   STP19N20


Document
www.DataSheet4U.com STB19N20 STP19N20 N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK MESH OVERLAY™ Power MOSFET General features Type STB19N20 STP19N20 ■ ■ ■ VDSS 200V 200V RDS(on) <0.16Ω <0.16Ω ID 15A 15A 3 Extremely high dv/dt capability 3 1 Gate charge minimized Very low intrinsic capacitances TO-220 1 2 D²PAK Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Internal schematic diagram Applications ■ Switching application Order codes Part number STB19N20 STP19N20 Marking B19N20 P19N20 Package D²PAK TO-220 Packaging Tape & reel Tube October 2006 Rev 1 1/14 www.st.com 14 DataSheet 4 U .com www.DataSheet4U.com Contents STB19N20 - STP19N20 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 5 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Rev 1 DataSheet 4 U .com www.DataSheet4U.com STB19N20 - STP19N20 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 200 ± 20 15 10 60 90 0.72 15 -55 to 150 Unit V V A A A W W/°C V/ns °C PTOT dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 1.38 62.5 300 Unit °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche curent, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 15 110 Unit A mJ Rev 1 3/14 DataSheet 4 U .com www.DataSheet4U.com Electrical characteristics STB19N20 - STP19N20 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 7.5A 2 3 0.15 Min. 200 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω 4 0.16 Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =8V, ID = 7.5A VDS =25V, f=1 MHz, VGS=0 VDD=160V, ID = 15A VGS =10V (see Figure 14) Min. Typ. 12 800 165 26 24 4.4 11.6 Max. Unit S pF pF pF nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/14 Rev 1 DataSheet 4 U .com www.DataSheet4U.com STB19N20 - STP19N20 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD=100 V, ID= 7.5A, RG=4.7Ω, VGS=10V (see Figure 13) VDD = 100 V, ID = 7.5A, RG = 4.7Ω, VGS = 10V (see Figure 13) Min. Typ. 11.5 22 Max. Unit ns ns Turn-off delay time Fall time 19 11 ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VGS=0 ISD=15A, VDD=50V di/dt = 100A/µs, (see Figure 18) ISD=15A, VDD=50V di/dt = 100A/µs, Tj=150°C (see Figure 18) 125 0.55 8.8 148 0.73 9.9 Test conditions Min Typ. Max 15 60 1.6 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Rev 1 5/14 DataSheet 4 U .com www.DataSheet4U.com Electrical characteristics STB19N20 - STP19N20 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-.


IRF640T STP19N20 R1150H


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)