STP19NB20FP

www.DataSheet4U.com N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 s s s s s STP19NB20 - STP19NB20FP STB19NB20-1 VDSS 200 V 200 V 200 V RDS(on) < 0.18 Ω < 0.18 Ω < 0.18 Ω ID 19 A 10 A 19 A 3 1 2 TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM 2 12 3 ...