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STP19N06 STP19N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP19N06 STP19N06FI
s s s s s s s s
V DSS 60 V 60 V
R DS( on) < 0.1 Ω < 0.1 Ω
ID 19 A 13 A
TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TE...
