SI7415DN

www.DataSheet4U.com Si7415DN New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –60 0.110 @ VGS = –4.5 V –4.4 FEATURES ID (A) –5.7 rDS(on) (W) 0.065 @ VGS = –10 V D TrenchFETr Power MOSFET D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile D Fast Switching APPLICATIONS D Load Switches D Half-Bridge Motor Drives D High voltage Non–Synchronous Buck Converters PowerPAKt 1212-8 S 3.30 mm S 1 2 3 S S 3.30 mm G 4 G D 8 7 6 5 D D D D P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –4.6 IDM IS –3.2 3.8 2.0 –55 to 150 –20 –1.3 1.5 0.8 W _C –2.9 A Symbol VDS VGS 10 secs Steady State –60 "20 Unit V –5.7 –3.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71691 S-04881—Rev. A, 22-Oct-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W 1 Si7415DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage ...