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STTH812

ST Microelectronics

Ultrafast recovery Diode

STTH812 Ultrafast recovery - 1200 V diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 8A 1200 V 17...


ST Microelectronics

STTH812

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Description
STTH812 Ultrafast recovery - 1200 V diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 8A 1200 V 175° C 1.25 V 50 ns Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated packages: – TO-220Ins Electrical insulation = 2500 VRMS Capacitance = 7 pF – TO-220FPAC Electrical insulation = 2000 VRMS Capacitance = 12 pF Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. A A K TO-220AC STTH812D K A NC D2PAK STTH812G Order codes Part Number STTH812D STTH812G STTH812G-TR STTH812FP STTH812DI K A K TO-220FPAC STTH812FP A K TO-220Ins STTH812DI Marking STTH812D STTH812G STTH812G STTH812FP STTH812DI March 2006 Rev 1 www.st.com 1/11 11 Characteristics 1 Characteristics STTH812 Table ...




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