N-Channel MOSFET
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SUM60N06-15
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
FE...
Description
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SUM60N06-15
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
FEATURES
rDS(on) (W) ID (A)
60 a
D TrenchFETr Power MOSFET D 175_C Junction Temperature
0.015 @ VGS = 10 V
APPLICATIONS
D Automotive Applications Such As: − ABS − EPS − Motor Drives D Industrial
D
TO-263
G
G
D S S
Top View Ordering Information: SUM60N06-15 SUM60N06-15-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
60 "20 60 35 100 35 61 100b 3.75 −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mountc Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72080 S-32406—Rev. B, 24-Nov-03 www.vishay.com
Symbol
RthJA RthJC
Limit
40 1.4
Unit
_C/W
1
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SUM60N06-15
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS ...
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