MT3S08T

www.DataSheet4U.com MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications · · Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 8 1.5 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA ― ― 2-1B1A g (typ.) Marking 3 TOSHIBA Weight: T 1 H 2 1 2002-01-23 www.DataSheet4U.com MT3S08T Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol fT |S21e| (1) |S21e| (2) NF 2 2 Test Condition VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Min 2 ¾ 10.5 ¾ Typ. 4.5 10.5 13.5 1.4 Max ¾ ¾ ¾ 2.5 Unit GHz dB dB Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note) Min ¾ ¾ 80 ¾ Typ. ¾ ¾ ¾ 0.55 Max 0.1 1 140 0.95 Unit mA mA ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity. Please ...