FDP79N15

www.DataSheet4U.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET UniFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability May 2006 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP79N15 79 50 316 FDPF79N15 150 79* 50* 316* Unit V A A A V mJ A mJ V/ns ± 30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 31 0.25 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Dr...