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FDPF79N15 Dataheets PDF



Part Number FDPF79N15
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF79N15 DatasheetFDPF79N15 Datasheet (PDF)

www.DataSheet4U.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET UniFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features • • • • • 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability May 2006 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini.

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www.DataSheet4U.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET UniFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features • • • • • 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability May 2006 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP79N15 79 50 316 FDPF79N15 150 79* 50* 316* Unit V A A A V mJ A mJ V/ns ± 30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 31 0.25 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDP79N15 0.27 62.5 FDPF79N15 -62.5 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP79N15 / FDPF79N15 Rev. A www.DataSheet4U.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP79N15 FDPF79N15 Device FDP79N15 FDPF79N15 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 39.5A VDS = 40V, ID = 39.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 150 -----3.0 ------ Typ -0.15 -----0.025 46 2620 730 96 50 200 55 38 56 18 21 ---136 2.1 Max Units --1 10 100 -100 5.0 0.03 -3410 950 140 112 410 120 85 73 --79 316 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 75V, ID = 79A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 120V, ID = 79A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 79A VGS = 0V, IS = 79A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP79N15 / FDPF79N15 Rev. A 2 www.fairchildsemi.com www.DataSheet4U.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 150 C 10 1 o 10 1 25 C -55 C ∝ Notes : 1. VDS = 40V 2. 250レ s Pulse Test o o ∝ Notes : 1. 250レ s Pulse Test 2. TC = 25∩ 10 -1 10 0 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.07 RDS(ON) [ヘ ],Drain-Source On-Resistance IDR, Reverse Drain Current [A] 0.06 10 2 0.05 VGS = 10V 0.04 10 1 150∩ 25∩ 0.03 VGS = 20V ∝ Note : TJ = 25∩ ∝ Notes : .


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