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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
• • • • • 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability
May 2006
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP79N15
79 50 316
FDPF79N15
150 79* 50* 316*
Unit
V A A A V mJ A mJ V/ns
± 30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 31 0.25
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FDP79N15
0.27 62.5
FDPF79N15
-62.5
Unit
°C/W °C/W
©2006 Fairchild Semiconductor Corporation
1
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FDP79N15 / FDPF79N15 Rev. A
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP79N15 FDPF79N15
Device
FDP79N15 FDPF79N15
Package
TO-220 TO-220F
TC = 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 39.5A VDS = 40V, ID = 39.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
150 -----3.0 ------
Typ
-0.15 -----0.025 46 2620 730 96 50 200 55 38 56 18 21 ---136 2.1
Max Units
--1 10 100 -100 5.0 0.03 -3410 950 140 112 410 120 85 73 --79 316 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 75V, ID = 79A RG = 25Ω
(Note 4, 5)
------(Note 4, 5)
VDS = 120V, ID = 79A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 79A VGS = 0V, IS = 79A dIF/dt =100A/μs
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP79N15 / FDPF79N15 Rev. A
2
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
2
150 C
10
1
o
10
1
25 C -55 C
∝ Notes : 1. VDS = 40V 2. 250レ s Pulse Test
o
o
∝ Notes : 1. 250レ s Pulse Test 2. TC = 25∩
10 -1 10
0
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.07
RDS(ON) [ヘ ],Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
0.06
10
2
0.05
VGS = 10V
0.04
10
1
150∩
25∩
0.03
VGS = 20V
∝ Note : TJ = 25∩
∝ Notes : .