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FDPF33N25 250V N-Channel MOSFET
FDPF33N25
250V N-Channel MOSFET Features
• 20A, 250V, RDS(on) = 0....
www.DataSheet4U.com
FDPF33N25 250V N-Channel MOSFET
FDPF33N25
250V N-Channel MOSFET Features
20A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv/dt capability
UniFET
Description
May 2006
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDPF33N25
250 20 12 80 ±30 918 20 9.4 4.5 94 0.76 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Therma...