Document
FDPF15N65 — N-Channel UniFETTM MOSFET
FDPF15N65
N-Channel UniFETTM MOSFET
650 V, 15 A, 440 mΩ
Features
• RDS(on) = 360 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 48.5 nC) • Low Crss (Typ. 23.6 pF) • 100% Avalanche Tested
Applications
• LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
G
TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM
Drain-Source Voltage Drain Current
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
VGSS EAS IAR EAR dv/dt
Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
FDPF15N65 650 15* 9.5* 60* ± 30 637 15 25.0 4.5 38.5 0.3
-55 to +150 300
FDPF15N65 3.3 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C °C
Unit
°C/W
©2006 Fairchild Semiconductor Corporation
1
FDPF15N65 Rev. C1
www.fairchildsemi.com
FDPF15N65 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Part Number FDPF15N65
Top Mark FDPF15N65
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS ΔBVDSS
/ ΔTJ IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA, TJ = 25°C
ID = 250 μA, Referenced to 25°C
VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 7.5 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 7.5 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1 MHz
td(on) tr
Turn-On Delay Time Turn-On Rise Time
VDD = 325 V, ID = 15 A, VGS = 10 V, RG = 21.7 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 520 V, ID = 15 A, VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4) (Note 4)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 15 A, dIF/dt =100 A/μs
Min.
650 ------
3.0 ---
----
--------
------
Typ.
-0.65
-----
-0.36 19.2
2380 295 23.6
65 125 105 65 48.5 14.0 21.2
---496 5.69
Max. Unit
--
--
1 10 100 -100
V
V/°C
μA μA nA nA
5.0
V
0.44
Ω
--
S
3095 pF
385
pF
35.5 pF
140
ns
260
ns
220
ns
140
ns
63.0 nC
--
nC
--
nC
15*
A
60
A
1.4
V
--
ns
--
μC
Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.23 mH, IAS = 15 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
©2006 Fairchild Semiconductor Corporation
2
FDPF15N65 Rev. C1
www.fairchildsemi.com
FDPF15N65 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
100
10-1 10-1
* Notes : 1. 250μs Pulse Test 2. TC = 25oC
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
DS(ON) R [Ω], Drain-Source On-Resistance
1.0
0.8
0.6
VGS = 10V
0.4
VGS = 20V 0.2
0.0 0
* Note : TJ = 25oC
10
20
30
40
50
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000 3000
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
2000
1000
Crss
* Note ; 1. VGS = 0 V 2. f = 1 MHz
.