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FDPF15N65 Dataheets PDF



Part Number FDPF15N65
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF15N65 DatasheetFDPF15N65 Datasheet (PDF)

FDPF15N65 — N-Channel UniFETTM MOSFET FDPF15N65 N-Channel UniFETTM MOSFET 650 V, 15 A, 440 mΩ Features • RDS(on) = 360 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 48.5 nC) • Low Crss (Typ. 23.6 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state res.

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FDPF15N65 — N-Channel UniFETTM MOSFET FDPF15N65 N-Channel UniFETTM MOSFET 650 V, 15 A, 440 mΩ Features • RDS(on) = 360 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 48.5 nC) • Low Crss (Typ. 23.6 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS G TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDPF15N65 650 15* 9.5* 60* ± 30 637 15 25.0 4.5 38.5 0.3 -55 to +150 300 FDPF15N65 3.3 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W ©2006 Fairchild Semiconductor Corporation 1 FDPF15N65 Rev. C1 www.fairchildsemi.com FDPF15N65 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDPF15N65 Top Mark FDPF15N65 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR Gate-Body Leakage Current, Reverse On Characteristics VGS = 0 V, ID = 250 μA, TJ = 25°C ID = 250 μA, Referenced to 25°C VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 7.5 A gFS Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = 7.5 A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1 MHz td(on) tr Turn-On Delay Time Turn-On Rise Time VDD = 325 V, ID = 15 A, VGS = 10 V, RG = 21.7 Ω td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge VDS = 520 V, ID = 15 A, VGS = 10 V Qgd Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings (Note 4) (Note 4) IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 15 A, dIF/dt =100 A/μs Min. 650 ------ 3.0 --- ---- -------- ------ Typ. -0.65 ----- -0.36 19.2 2380 295 23.6 65 125 105 65 48.5 14.0 21.2 ---496 5.69 Max. Unit -- -- 1 10 100 -100 V V/°C μA μA nA nA 5.0 V 0.44 Ω -- S 3095 pF 385 pF 35.5 pF 140 ns 260 ns 220 ns 140 ns 63.0 nC -- nC -- nC 15* A 60 A 1.4 V -- ns -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.23 mH, IAS = 15 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation 2 FDPF15N65 Rev. C1 www.fairchildsemi.com FDPF15N65 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 101 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 100 10-1 10-1 * Notes : 1. 250μs Pulse Test 2. TC = 25oC 100 101 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage DS(ON) R [Ω], Drain-Source On-Resistance 1.0 0.8 0.6 VGS = 10V 0.4 VGS = 20V 0.2 0.0 0 * Note : TJ = 25oC 10 20 30 40 50 ID, Drain Current [A] Figure 5. Capacitance Characteristics 5000 4000 3000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 1000 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz .


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