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Final Datasheet
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2014
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
General Description
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Applications
DC/DC converters
D D
C C
A1 A2
8C 7C
SO-8
Pin 1
G S
A A
S3 G4
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
(Note 1a)
VRRM IO TJ, TSTG
Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Temperature
(Note 1a)
6D 5D
Ratings 30 ±20 4 20 2 1.6 30 2
-55 to 150
Units V V
A
W
V A °C
Thermal Characteristics
RθJA RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
78
(Note 1)
40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDFS6N754
Device FDFS6N754
Package SO-8
Reel Size 330mm
Tape Width 12mm
Quantity 2500 units
©2006 Fairchild Semiconductor Corporation
1
FDFS6N754 Rev. A1
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
∆BVDSS ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
ID = 250µA, referenced to 25°C
VDS = 24V VGS = 0V
TJ = 125°C
VGS = ±20V, VDS = 0V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
1
∆VGS(th) ∆TJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 4A
rDS(on)
Drain to Source On Resistance
VGS = 4.5V, ID =3.5A
VGS = 10V, ID = 4A, TJ = 125°C
gFS
Forward Transconductance
VDS = 5V, ID = 4A
Dynamic Characteristics
Ciss Coss Crss RG
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Switching Characteristics (Note 2)
td(on) tr td(off) tf Qg(T.