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FDFS6N754 Dataheets PDF



Part Number FDFS6N754
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET and Schottky Diode
Datasheet FDFS6N754 DatasheetFDFS6N754 Datasheet (PDF)

Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ Features „ Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A „ VF < 0.45V @ 2A VF < 0.28V @ 100mA „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ Low Gate Charge (Qg = 4n.

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Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2014 FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ Features „ Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A „ VF < 0.45V @ 2A VF < 0.28V @ 100mA „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ Low Gate Charge (Qg = 4nC) „ Low Miller Charge General Description The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Applications „ DC/DC converters D D C C A1 A2 8C 7C SO-8 Pin 1 G S A A S3 G4 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Dual Operation PD Power Dissipation for Single Operation (Note 1a) VRRM IO TJ, TSTG Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Temperature (Note 1a) 6D 5D Ratings 30 ±20 4 20 2 1.6 30 2 -55 to 150 Units V V A W V A °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 78 (Note 1) 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDFS6N754 Device FDFS6N754 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation 1 FDFS6N754 Rev. A1 www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 30 ID = 250µA, referenced to 25°C VDS = 24V VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 4A rDS(on) Drain to Source On Resistance VGS = 4.5V, ID =3.5A VGS = 10V, ID = 4A, TJ = 125°C gFS Forward Transconductance VDS = 5V, ID = 4A Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching Characteristics (Note 2) td(on) tr td(off) tf Qg(T.


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