RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
Description
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Freescale Semiconductor Technical Data
MRF1513 Rev. 6, 3/2005
RF Power Field Effect Transistor
N−Channel Enhancement−Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, common source amplifi...
