HAT1072H
Silicon P Channel Power MOS FET Power Switching
Features
Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS (on) = 3.6 mΩ typ (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
REJ03G1155-0700 (Previous: ADE-208-1534E)
Rev.7.00 Sep 07, 2005
5 D
SSS 123
1, 2...
