The Industrys Highest Power 670 nm Band Laser Diode Achieves 500 mW Optical Power Output
www.DataSheet4U.com
Light-current 800
CW drive Tc = 25°C
Far field pattern 1.0
CW drive Tc = 25°C Po = 500 mW
Spectru...
Description
www.DataSheet4U.com
Light-current 800
CW drive Tc = 25°C
Far field pattern 1.0
CW drive Tc = 25°C Po = 500 mW
Spectrum 1.0
CW drive Tc = 25°C Po = 500 mW
0.8
0.8 θ⊥
600
Po [mW]
0.6 400 0.4 200 0.2 θ//
0.6
0.4
0.2
0
0
300
600 If [mA]
900
1200
0.0
–40
–20
0
20
40
0.0
650
660
670
680
690
Angle [deg.]
Wavelength [nm]
s Figure 1 SLD1332V Representative Characteristics
s Table 1 SLD1332V Main Characteristics
P-side electrode
Item Threshold current Operating current Operating voltage Symbol Typical value Ith Iop Vop λp θ// θ⊥ ηD 400 900 2.4 670 8 deg. 24 1.0 mW/mA Unit mA V nm
Laser beam emitting point
Active layer
Oscillation wavelength Radiation angle Parallel to junction Perpendicular to junction
GaAs substrate
Differential efficiency
100 µm N-side electrode
Conditions: TC = 25°C Po = 500 mW@CW
s Figure 2 SLD1332V Chip Structure
⊥
//
–3
–2
–1
0
1
2
3 Unit: µm
–80 –60 –40 –20
0
20
40
60
80
Unit: µm
s Figure 3 SLD1332V Near-Field Pattern
...
Similar Datasheet