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BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
● ● ● ●
Designed for Complementary Use with the BD546 Series 85 W at 25°C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available
C B
SOT-93 PACKAGE (TOP VIEW) 1
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD545 Collector-base voltage (IE = 0) BD545A BD545B BD545C BD545 Collector-emitter voltage (IB = 0) (see Note 1) BD545A BD545B BD545C Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 40 60 80 100 40 60 80 100 5 15 85 3.5 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT
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INFORMATION
1
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD545 V(BR)CEO IC = 30 mA (see Note 4) VCE = 40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 60 V VCE = 80 V VCE = 100 V ICEO IEBO VCE = 30 V VCE = 60 V VEB = VCE = VCE = VCE = IB = VCE = 5V 4V 4V 4V 2A 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = 1A 5A 5A (see Notes 4 and 5) 60 25 10 (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 0.8 1 1.8 V V IB = 0 BD545A BD545B BD545C BD545 BD545A BD545B BD545C BD545/545A BD545B/545C MIN 40 60 80 100 0.4 0.4 0.4 0.4 0.7 0.7 1 mA mA mA V TYP MAX UNIT
hFE
IC = 10 A IC = 10 A IC = 10 A IC = 0.5 A IC = 0.5 A
V CE(sat) VBE hfe
IB = 625 mA
VCE = 10 V VCE = 10 V
|hfe |
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.47 35.7 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER ton toff
†
TEST CONDITIONS IC = 6 A VBE(off) = -4 V IB(on) = 0.6 A RL = 5 Ω
†
MIN IB(off) = -0.6 A tp = 20 µs, dc ≤ 2%
TYP 0.6 1
MAX
UNIT µs µs
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
1000 VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2%
TCS633AJ
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 10
TCS633AB
IC = IC = IC = IC =
1A 3A 6A 10 A
hFE - DC Current Gain
100
1·0
10
0·1
1·0 0·1
1·0 IC - Collector Current - A
10
0·01 0·01
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
1·8 VCE = 4 V TC = 25°C VBE - Base-Emitter Voltage - V 1·6
TCS633AC
1·4
1·2
1·0
0·8
0·6 0·1
1 IC - Collector Current - A
10
Figure 3.
PRODUCT
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INFORMATION
3
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS633AE
IC - Collector Current - A
10
1·0
0·1 BD545 BD545A BD545B BD545C 10 100 1000
0·01 1·0
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W
TIS633AC
80
60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
DataSheet 4 U .com
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BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
MECHANICAL DATA SOT-93 3-pin plastic flange.